Terahertz Emission of Gallium Arsenide on Textured p-type Silicon (100) Substrates Grown via Molecular Beam Epitaxy

*Karl Cedric P. Gonzales  -  National Institute of Physics, University of the Philippines, Philippines
Karim M. Omambac  -  National Institute of Physics, University of the Philippines, Philippines
Elizabeth Ann P. Prieto  -  National Institute of Physics, University of the Philippines, Philippines
Jessica Pauline C. Afalla  -  National Institute of Physics, University of the Philippines, Philippines
Maria Herminia M. Balgos  -  National Institute of Physics, University of the Philippines, Philippines
Rafael B. Jaculbia  -  National Institute of Physics, University of the Philippines, Philippines
Armando S. Somintac  -  National Institute of Physics, University of the Philippines, Philippines
Arnel A. Salvador  -  National Institute of Physics, University of the Philippines, Philippines
Elmer S. Estacio  -  National Institute of Physics, University of the Philippines, Philippines
Received: 14 Dec 2018; Published: 14 Dec 2018.
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Abstract
This study presents the terahertz (THz) emission of molecular beam epitaxy (MBE)-grown Gallium Arsenide (GaAs) on surface textured p-type Silicon (p- Si) (100) substrates. Surface texturing was achieved by anisotropic wet chemical etching using 5% wt Potassium Hydroxide (KOH): Isopropyl alcohol (IPA) (50:1) solution for 15, 30, 45, and 60 minutes. Reflectivity measurements for the textured p-Si(100) substrates indicated that the overall texturing increases with longer etching times. Raman spectroscopy of the post-growth samples confirmed GaAs growth. The THz emission intensities were the same order of magnitude. The GaAs grown on p-Si(100) textured for 60 minutes exhibited the most intense THz emission attributed to the increased absorption from a larger surface-to-volume ratio due to surface texturing. All GaAs on textured p-Si(100) samples had frequency bandwidth of ~2.5 THz.
Keywords
GaAs on Si;Molecular Beam Epitaxy;Terahertz;Surface Texturing

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