BibTex Citation Data :
@article{JPA17945, author = {Ivan Cedrick Verona and Alexander De los Reyes and Hannah Bardolaza and Elmer Estacio}, title = {Terahertz Quasi-Time Domain Spectroscopy using a 808nm multimode diode laser}, journal = {Journal of Physics and Its Applications}, volume = {5}, number = {2}, year = {2023}, keywords = {terahertz, spectroscopy, semiconductor laser}, abstract = { We report on a terahertz quasi-time domain spectroscopy (QTDS) system based on a low-cost continuous wave multimode diode laser. Commercially available low-temperature grown gallium arsenide (LT-GaAs) based photoconductive antennas (PCAs) with spiral and dipole configurations were used as emitter and detector, respectively. Terahertz pulses spaced at approximately 55 ps with a bandwidth of 400 GHz were obtained. Parametric measurements of the terahertz peak-to-peak intensity were performed by varying the injection current and temperature while maintaining incident laser power. The highest peak-to-peak intensity was obtained at 170mA injection current and 20° C temperature settings. The change in the THz peak-to-peak intensity is attributed to the mode hopping characteristics of the device which in turn, is dependent on injection current and temperature. }, issn = {2622-5956}, pages = {58--61} doi = {10.14710/jpa.v5i2.17945}, url = {https://ejournal2.undip.ac.id/index.php/jpa/article/view/17945} }
Refworks Citation Data :
We report on a terahertz quasi-time domain spectroscopy (QTDS) system based on a low-cost continuous wave multimode diode laser. Commercially available low-temperature grown gallium arsenide (LT-GaAs) based photoconductive antennas (PCAs) with spiral and dipole configurations were used as emitter and detector, respectively. Terahertz pulses spaced at approximately 55 ps with a bandwidth of 400 GHz were obtained. Parametric measurements of the terahertz peak-to-peak intensity were performed by varying the injection current and temperature while maintaining incident laser power. The highest peak-to-peak intensity was obtained at 170mA injection current and 20° C temperature settings. The change in the THz peak-to-peak intensity is attributed to the mode hopping characteristics of the device which in turn, is dependent on injection current and temperature.
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